五(二甲氨基)钽(V)

• 产品号: 496863
• CAS号: 19824-59-0
• 分子式: C10H30N5Ta
• 分子量: 401.3266
• 纯 度: 99.99%

产品别名

• 标题: Pentakis(dimethylamino)tantalum(V)
• IUPAC标准名: dimethyl[tetrakis(dimethylamino)tantalio]amine
• IUPAC传统名: dimethyl[tetrakis(dimethylamino)tantalio]amine
• 别名: Tantalum dimethylamide; TADMA; Ta(NMe2)5; PDMAT

产品登记号

• MDL号: MFCD01631286
• CAS号: 19824-59-0
• PubChem SID: 24873088

产品性质

• 线性分子式: Ta(N(CH3)2)5
• 纯度: 99.99%
• 外观: solid
• 熔点: 100 °C (dec.)(lit.)
• GHS警示词: Danger
• GHS危险声明: H260-H314
• 欧盟危险性物质标志: 易燃性(Flammable) (F)
• 欧盟危险性物质标志: 腐蚀性(Corrosive) (C)
• 个人保护装置: Eyeshields, Faceshields, full-face particle respirator type N100 (US), Gloves, respirator cartridge type N100 (US), type P1 (EN143) respirator filter, type P3 (EN 143) respirator cartridges
• GHS警示性声明: P223-P231 + P232-P280-P305 + P351 + P338-P370 + P378-P422
• RID/ADR: UN 3131 4.3/PG 1
• 危险公开号: 11-14/15-34
• 安全公开号: 16-26-36/37/39-43-45
• 欧盟补充危害声明: Reacts violently with water.
• 联合国危险货物等级: 4.3
• 联合国危险货物编号: 3131
• 联合国危险货物包装类别(PG): 1
• 德国WGK号: 3

产品详细信息

详细说明 (English)

Features and Benefits
Volatile solid CVD precursor to tantalum nitride (TaN) thin films. Also yields tantalum oxide (Ta2O5) thin films when O2, H2O, NO or H2O2 is present during the deposition process.1,2 Ta2O5 thins films show promise as gate dielectric materials in the manufacture of integrated circuits.
General description
Atomic number of base material: 73 Tantalum
Packaging
5 g in glass bottle

详细说明 (简体中文)

Features and Benefits
氮化钽 (TaN) 薄膜的挥发性固体 CVD 前体。当在沉积过程中存在 O2、H2O、NO 或 H2O2 时，还会形成氧化钽 (Ta2O5) 薄膜。1,2 Ta2O5 薄膜作为集成电路制造中的栅电介质材料具有广阔的应用前景。
General description
Atomic number of base material: 73 Tantalum
包装
5 g in glass bottle