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二(甲基-η5-环戊二烯)二甲基铪_分子结构_CAS_68193-43-1)
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二(甲基-η5-环戊二烯)二甲基铪

产品号 725501 公司名称 Sigma Aldrich
CAS号 68193-43-1 公司网站 http://www.sigmaaldrich.com
分子式 C14H20Hf 电 话 1-800-521-8956
分子量 366.7986 传 真
纯 度 电子邮件
保 存 Chembase数据库ID: 143519

产品价格信息

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产品别名

标题
Bis(methyl-η5-cyclopentadienyl)dimethylhafnium
IUPAC标准名
bis(3-methylcyclopenta-2,4-dien-1-ide); dimethylhafniumbis(ylium)
IUPAC传统名
bis(3-methylcyclopenta-2,4-dien-1-ide); dimethylhafniumbis(ylium)
别名
HfD-CO2
HFCMME

产品登记号

CAS号 68193-43-1
MDL号 MFCD16875684

产品性质

线性分子式 Hf[C5H4(CH3)]2(CH3)2
外观 white waxy solid
沸点 80-120 °C/0.3-0.5 mmHg(lit.)
密度 1.60 g/mL±0.01 g/mL at 25 °C
熔点 60 °C(lit.)
GHS危险品标识 GHS07
GHS警示词 Warning
GHS危险声明 H315-H319-H335
欧盟危险性物质标志 刺激性(Irritant) 刺激性(Irritant) (Xi)
MSDS下载 下载链接
GHS警示性声明 P261-P305 + P351 + P338
危险公开号 36/37/38
安全公开号 24/25-26-36/37/39
德国WGK号 3

产品详细信息

详细说明 (English)
Frequently Asked Questions
Live Chat and Frequently Asked Questions are available for this Product.
Application
Advanced precursor for atomic layer deposition of HfO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.1 Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.2
Features and Benefits
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
General description
Atomic number of base material: 72 Hafnium
Packaging
10 g in ss cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
Protocols & Applications
Precursors Packaged for Depositions Systems
详细说明 (简体中文)
Frequently Asked Questions
Live Chat and Frequently Asked Questions are available for this Product.
Application
Advanced precursor for atomic layer deposition of HfO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.1 Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.2
Features and Benefits
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
General description
Atomic number of base material: 72 Hafnium
包装
10 g in ss cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
Protocols & Applications
Precursors Packaged for Depositions Systems

参考文献